Arrays of magnetic tunnelling junctions for field programmable logic gates

Abstract In spin-logic, one gains the advantages of magnetic film elements, i.e. non-volatility, the possibility of fast operation, radiation hardness and non-destructive readout. Here, we experimentally demonstrate the feasibility of logic gate arrays, based on spin-dependent tunnelling elements, which can be separately programmed on-chip to form a logic OR, AND, NOR or NAND function. Key factors for the tunnelling junctions and the gate arrays as reproducibility of both the resistance and the magnetoresistance, TMR amplitude and switching behaviour are discussed and demonstrated.