Thermal stability of spin-transfer switching in CPP-GMR devices

Abstract Spin-transfer switching (STS) was investigated in CoFe/Cu/CoFe current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) devices. The devices showed magnetoresistance ratio of 0.65±0.04% at room temperature. Abrupt resistance changes due to STS were clearly observed by applying short current pulses. We evaluated thermal stability factors of the small Co–Fe free layer cell from pulse duration dependence of switching current and from static magnetization processes. The thermal stability factors obtained from the two methods were in good agreement.