Hysteretic rotational magnetization of pinned layer in NiO spin-valve

The magnetoresistance (MR) curves during the rotation of magnetic field in NiO spin-valve are well described by taking into account the involved magnetization process of free and pinned layers according to rotating field strength. In particular, hysteretic MR characteristics pronounced in a field strength of 1.5 times the exchange field are ascribed for by the viscosity effect on magnetization rotation of pinned layer. These analyses of MR curves provide a basis decomposing the MR components from each magnetization process of free and pinned layers.