Improvement of Curie temperature in Mn selectively -doped GaAs/AlGaAs heterostructures by self-consistent analysis

Abstract We present a self-consistent analysis of the Curie temperature ( T c ) modulation in Mn δ -doped GaAs/Be-doped AlGaAs heterostructures. Considering the influences of both Mn dopants and Hartree potential, we solve simultaneously the Schrodinger and Poisson equations for different Mn δ -doping positions ( d s ) and uncompensated Mn atom concentration ( N Mn ). Under low dopant concentration ( N Mn 4 × 10 15 / m 2 ), the peak position of the two-dimensional hole gas envelope function is fixed at 4 nm distance away from the heterointerface, which is independent of delta-doping position. Further increasing the effective Mn concentration will lead to the remarkable shift of the envelope function. T c of the heterostructure can be enhanced up to 1.6 times under optimized calculational parameters. Our theoretical results agree well with experimental results available for this system.