Controlled fabrication of nano-scale double barrier magnetic tunnel junctions using focused ion beam milling method

Abstract The controlled fabrication method for nano-scale double barrier magnetic tunnel junctions (DBMTJs) with the layer structure of Ta(5)/Cu(10)/Ni 79 Fe 21 (5)/Ir 22 Mn 78 (12)/Co 60 Fe 20 B 20 (4)/Al(1)–oxide/Co 60 Fe 20 B 20 (6)/Al(1)–oxide/Co 60 Fe 20 B 20 (4)/Ir 22 Mn 78 (12)/Ni 79 Fe 21 (5)/Ta(5) (thickness unit: nm) was used. This method involved depositing thin multi-layer stacks by sputtering system, and depositing a Pt nano-pillar using a focused ion beam which acted both as a top contact and as an etching mask. The advantages of this process over the traditional process using e-beam and optical lithography in that it involve only few processing steps, e.g. it does not involve any lift-off steps. In order to evaluate the nanofabrication techniques, the DBMTJs with the dimensions of 200 nm×400 nm, 200 nm×200 nm nano-scale were prepared and their R – H , I – V characteristics were measured.