Production and characteristics of La0.67Sr0.33MnO3/La0.85Sr0.15MnO3/La0.67Sr0.33MnO3 tri-layer tunneling magnetoresistance device

Abstract We report a procedure to fabricate a tri-layer La 0.67 Sr 0.33 MnO 3 /La 0.85 Sr 0.15 MnO 3 /La 0.67 Sr 0.33 MnO 3 tunneling magnetoresistance (TMR) device deposited on an SrTiO 3 substrate. The devices have been characterized by high-resolution transmission electron microscopy (TEM), tunneling current versus voltage, and magnetoresistance (MR). The TMR phenomenon has been observed up to 320 K. A procedure to further optimize this device has been proposed.