Effect of oxygen annealing on the Mn2+ properties in ZnMnO Films
Source abstract
Abstract
Abstract We studied the influence of thermal annealing in oxygen on the physical properties of MOCVD grown Zn 1− x Mn x O thin layers. Annealing in the 300–1000 °C temperature range modifies both lattice parameters and magnetic properties of the layers. Correlation of the results from X-ray diffraction, EPR studies and Raman spectroscopy indicate a modification of the Mn +2 -related features in the ZnO matrix.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Copper-based nanomaterials and applications · Electronic and Structural Properties of Oxides
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References (8)
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