Magnetization reversal of sub-micron ferromagnetic tunnel junctions in external magnetic fields

Sub-micron sized magnetic tunnel junctions are fabricated by electron beam lithography. Magnetoresistance measurements were done at crossed easy- and hard-axis fields and the critical switching curves for 3 different sub-μm junctions are discussed. Single domain like switching according to the Stoner and Wohlfarth model can be achieved, but Neel coupling effects and AAF stray field effects have to be controlled.