Magnetoresistance in Fe/ZnSe/Fe planar junctions
Source abstract
Abstract
Abstract We report on the magnetoresistance measurements in Fe/ZnSe/Fe planar junctions. Fe/ZnSe/Fe structures were successfully grown by molecular beam epitaxy and subsequently patterned using optical lithography. At low temperature, the tunneling of electrons from one Fe layer to the other through ZnSe gives arise a small tunneling magnetoresistance ( 100%) with an almost quadratic field dependence was observed for field as high as 80 kOe.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Magnetic properties of thin films · Quantum and electron transport phenomena · Surface and Thin Film Phenomena
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References (8)
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