Optimization of magnetic parameters for toggle magnetoresistance random access memory

The magnetic parameters of the synthetic antiferromagnetic (SAF) elements for toggle-mode magnetoresistance random access memories (Toggle-MRAMs) have been optimized using the critical field curves obtained by analytical method with the aid of numerical calculations, to maximize the operating field margin taking into account the required memory density, storage lifetime, half-select disturb robustness, and the available strength of operating field. The control of especially low-exchange coupling strength in the SAF in addition to the increase of the operating field has been found to be essential for the development of toggle-MRAM in near future.