Magnetic tunnel junctions prepared by ultraviolet light assisted oxidation
Source abstract
Abstract
Abstract Ultraviolet light assisted oxidation has been applied for the first time to oxidize the barriers in ferromagnetic tunnel junctions. It is shown that this method produces junctions of good quality with an area resistance of the order of 1 kΩ μm2 which is very attractive as the key device for future magneto random access memories.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Magnetic properties of thin films · Advanced Memory and Neural Computing · Semiconductor materials and devices
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References (15)
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1. Juillere · Phys. Lett. · 1975 · A 54 · 22510.1016/0375-9601(75)90174-7 ↗
2. Miyazaki · J. Magn. Magn. Mater. · 1995 · 139 · L23110.1016/0304-8853(95)90001-2 ↗
3. Tsuge · Appl. Phys. Lett. · 1997 · 71 · 329610.1063/1.120317 ↗
4. Gallagher · J. Appl. Phys. · 1997 · 81 · 374110.1063/1.364744 ↗
5. Moodera · J. Appl. Phys. · 1996 · 79 · 472410.1063/1.361653 ↗
6. Fritzsch · Physica C · 1998 · 296 · 31910.1016/S0921-4534(97)01829-7 ↗
7. van de Veerdonck · Phys. Lett. · 1997 · 71 · 2839
8. H.A.M. de Gronckel, H. Kohlstedt, C. Daniels, Appl. Phys. A (1999), submitted for publication.
9. Stratton · J. Phys. Chem. Solids · 1962 · 23 · 117710.1016/0022-3697(62)90165-8 ↗
10. Zhang · Phys. Rev. Lett. · 1997 · 79 · 374410.1103/PhysRevLett.79.3744 ↗
11. Cabrera · Rep. Progr. Phys. · 1949 · 12 · 16310.1088/0034-4885/12/1/308 ↗
12. Martin · Thin Solid Films · 1994 · 250 · 6110.1016/0040-6090(94)90166-X ↗
13. Huggins · J. Appl. Phys. · 1985 · 57 · 210310.1063/1.334403 ↗
14. Cabrera · Philos. Magn. · 1949 · 40 · 17510.1080/14786444908521716 ↗
15. Daughton · J. Appl. Phys. · 1997 · 81 · 375810.1063/1.365499 ↗