Oriented and polycrystalline NdNiO3 thin films on silicon substrate

Abstract NdNiO 3 thin films deposited on Si(1 0 0) were prepared by RF sputtering and subsequent oxygen annealing. Films deposited at 250°C are polycrystalline with a metal–insulator transition around 150 K. Films grown at 600°C are oriented, with a transition temperature around 200 K as usually observed in bulk ceramics. To our knowledge it is the first time that oriented thin films synthesis of NdNiO 3 on Si(1 0 0) is reported. Combination of X-ray diffraction and high-resolution electron microscopy was used for characterising the films. The relationship between microstructure and transport properties is discussed.