journal article·2025-10

Magnetic anisotropy of Co/h-BN heterostructures: First principles calculations

Dian Putri Hastuti, Yukie Kitaoka, Hiroshi Imamura

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Magnetic properties of thin films · Boron and Carbon Nanomaterials Research · Heusler alloys: electronic and magnetic properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (38)

Show source-provided references
1. Spin torque switching of perpendicular Ta CoFeB MgO-based magnetic tunnel junctions10.1063/1.3536482 ↗
2. Future prospects of MRAM technologies
3. Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)10.1063/1.4869828 ↗
4. A new spin on magnetic memories10.1038/nnano.2015.24 ↗
5. Magnetoresistive random access memory
6. Recent progress in the voltage-controlled magnetic anisotropy effect and the challenges faced in developing voltage-torque MRAM10.3390/mi10050327 ↗
7. Magnetoresistive sensors
8. Critical challenges for picoTesla magnetic-tunnel-junction sensors10.1016/j.sna.2009.08.016 ↗
9. Review of noise sources in magnetic tunnel junction sensors10.1109/TMAG.2010.2100814 ↗
10. Magnetocardiography and magnetoencephalography measurements at room temperature using tunnel magneto-resistance sensors10.7567/APEX.11.023001 ↗
11. Measurement of triaxial magnetocardiography using high sensitivity tunnel magnetoresistance sensor10.1109/JSEN.2019.2927086 ↗
12. Sub-pT magnetic field detection by tunnel magneto-resistive sensors10.35848/1882-0786/ac3809 ↗
13. Tunnel magnetoresistance sensors with symmetric resistance-field response and noise properties under AC magnetic field modulation10.1063/5.0119677 ↗
14. 1/f noise of a nanopillar tunnel-magnetoresistance sensor originating from a wide distribution of bath correlation times10.1103/PhysRevApplied.22.014032 ↗
15. Spin-dependent tunneling conductance of Fe/MgO/Fe sandwiches10.1103/PhysRevB.63.054416 ↗
16. Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction10.1103/PhysRevB.63.220403 ↗
17. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers10.1038/nmat1256 ↗
18. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions10.1038/nmat1257 ↗
19. Anatomy and giant enhancement of the perpendicular magnetic anisotropy of cobalt graphene heterostructures10.1021/acs.nanolett.5b03392 ↗
20. Graphene and two-dimensional materials for silicon technology10.1038/s41586-019-1573-9 ↗
21. Two-dimensional spintronics for low-power electronics
22. 2D materials for spintronic devices10.1038/s41699-020-0152-0 ↗
23. Comparison of hexagonal boron nitride and MgO tunnel barriers in Fe, Co magnetic tunnel junctions10.1063/5.0049792 ↗
24. Three-dimensional integration of two-dimensional field-effect transistors10.1038/s41586-023-06860-5 ↗
25. Synthesis of few-layer hexagonal boron nitride for magnetic tunnel junction application10.1021/acsami.4c05289 ↗
26. Enhancement of magnetocrystalline anisotropy in ferromagnetic Fe films by intra-atomic noncollinear magnetism
27. Role of an interfacial FeO layer in the electric-field-driven switching of magnetocrystalline anisotropy at the Fe/MgO interface10.1103/PhysRevB.81.220409 ↗
28. Full-potential self-consistent linearized-augmented-plane-wave method for calculating the electronic structure of molecules and surfaces: O2 molecule10.1103/PhysRevB.24.864 ↗
29. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
30. Improved description of the structure of molecular and layered crystals: Ab initio DFT calculations with van der Waals corrections10.1021/jp106469x ↗
31. First-principles calculation of the magnetocrystalline anisotropy energy of iron, cobalt, and nickel10.1103/PhysRevB.41.11919 ↗
32. Torque method for the theoretical determination of magnetocrystalline anisotropy10.1103/PhysRevB.54.61 ↗
33. Giant modification of the magnetocrystalline anisotropy in transition-metal monolayers by an external electric field10.1103/PhysRevLett.102.187201 ↗
34. Comparing h-BN and MgO tunnel barriers for scaled magnetic tunnel junctions
35. Two- and one-dimensional honeycomb structures of silicon and germanium10.1103/PhysRevLett.102.236804 ↗
36. Electronic structure and surface chemistry of hexagonal boron nitride on HOPG and nickel substrates10.1021/acsomega.3c00562 ↗
37. Large voltage-induced changes in the perpendicular magnetic anisotropy of an mgo-based tunnel junction with an ultrathin fe layer10.1103/PhysRevApplied.5.044006 ↗
38. Interface-induced perpendicular magnetic anisotropy of co nanoparticles on single-layer h-BN/pt(111)10.1063/1.5010836 ↗