Conductance, spin and valley polarizations through 8-Pmmn borophene magnetic barriers
Source abstract
Abstract
Conductance, spin and valley polarizations through 8- Pmmn borophene barriers in the presence of external Rashba spin–orbit interaction (RSOI) and magnetic field are investigated theoretically. The spin-dependent conductance shows a strong dependence on the direction of the 8- Pmmn borophene barriers, the strength of RSOI and value of the magnetic field strength. For two barriers unlike to one barrier, the spin-dependent conductance exhibits a prominent oscillatory behavior. For the parallel configuration, the dependence of conductance on the magnetic field is more than for the antiparallel configuration. Transmission probability without and with spin rotation decreases drastically with the increase in the value of the magnetic field, so that for sufficiently large magnetic fields, the transmission probability is zero for most electron incidence angles. The size and direction of the spin and valley polarization can be tuned by the strength of RSOI, direction of the 8- Pmmn borophene barriers, size of the magnetic field and type of parallel or antiparallel configuration. In certain conditions, full valley polarization can be achieved in the proposed structure.
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Research context
OpenAlex topics: Graphene research and applications · Quantum and electron transport phenomena · Boron and Carbon Nanomaterials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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