Analysis of electronic properties of hexagonal and triangular Bismuth quantum dot with different edges in the presence of magnetic field
Source abstract
Abstract
We investigate energy spectra of Bi honeycomb quantum dots (BiQDs) considering buckled hexagonal and triangular structures with zigzag and armchair edges. We apply the four-orbital tight-binding approach. By using of the probability density of states, we distinguish some edge states in the regime of the band gap of Bi monolayer. We see that the number of edge states of zigzag (armchair) triangular BiQDs is more than the number of edge states of zigzag (armchair) hexagonal BiQDs. Also, we investigated energy spectra of hexagonal and triangular BiQDs with zigzag and armchair edges in the presence of the perpendicular magnetic fields. In the low and strong magnetic fields, there are relativistic Landau levels in the electronic spectra of BiQDs (in the hexagonal and triangular boundary conditions). Moreover, we show that edge atoms have more important roles in the formation of the line connectors between i and | i + 1 | Landau levels of hexagonal BiQDs than ones that are in the triangular BiQDs. In the middle numbers of the magnetic fields, more states collapse into Landau levels in which bulk atoms have a significant role to constitute them in both hexagonal and triangular BiQDs. Furthermore as the same as Bi nanoribbon spectrum, there are some helical edge modes in the band gap regions of Bi monolayer in which edge atoms are responsible to form them. These helical edge modes have topological properties.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Topological Materials and Phenomena · Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (35)
Show source-provided references
1. Van der Waals heterostructures10.1038/nature12385 ↗
2. Topological phases in Bi/Sb planar and buckled honeycomb monolayers10.1016/j.physleta.2018.06.037 ↗
3. Stability of electronical properties of Antimony antidot nanostructure in the presence and in the absence of substrate10.1016/j.physb.2023.414832 ↗
4. Thermoelectric power generation efficiency of zigzag monolayer nanoribbon of bismuth10.1088/1361-6528/ab946f ↗
5. Analysis of electronical properties of bismuth and silicene antidot in the presence of strain using the four-orbital tight-binding method10.1016/j.physleta.2020.126364 ↗
6. Bismuth-based nanostructured photocatalysts for the remediation of antibiotics and organ dyes10.3762/bjnano.14.26 ↗
7. Topological insulators10.1103/RevModPhys.82.3045 ↗
8. The nontrivial electronic structure of Bi/Sb honeycombs on SiC (0001)10.1088/1367-2630/17/2/025005 ↗
9. Stability of topological properties of bismuth (111) bilayer
10. Strain driven topological phase transitions in atomically thin films of group IV and V elements in the honeycomb structures10.1088/1367-2630/16/10/105018 ↗
11. One-dimensional topological edge states of bismuth bi-layers10.1038/nphys3048 ↗
12. One-dimensional edge state of bi thin film grown on Si(111)10.1063/1.4927206 ↗
13. Spatial and energy distribution of topological edge states in single Bi (111) bilayer10.1103/PhysRevLett.109.016801 ↗
14. Bismuthene on a SiC substrate: a candidate for a high-temperature quantum spin Hall material10.1126/science.aai8142 ↗
15. Edge engineering of a topological Bi(111) bilayer10.1103/PhysRevB.90.165412 ↗
16. First-principles investigation of structural and electronic properties of ultrathin Bi films10.1103/PhysRevB.77.045428 ↗
17. Realization of Diraccones in few bilayer Sb(111) films by surface modification10.1186/s11671-015-1043-8 ↗
18. Engineering electronic structure of a two-dimensional topological in-sulator Bi (111) bilayer on Sb nanofilms by quantum confinement effect10.1021/acsnano.6b00987 ↗
19. Size-dependent structural and electronic properties of Bi (111) ultrathin nanofilms from first principles
20. Tunable topological electronic structures in Sb(111) bilayers: a first-principles study10.1063/1.4776734 ↗
21. Ultrasmall bismuth quantum dots: Facile liquid-phase exfoliation, characterization, and application in high-performance uvvis photodetector10.1021/acsphotonics.7b01211 ↗
22. Bismuth quantum dot (Bi QD)/polydimethylsiloxane (PDMS) nanocomposites with self-cleaning and antibacterial activity for dental applications10.3390/nano12213911 ↗
23. Near infrared induced optical heating in laser ablated Bi quantum dots10.1016/j.jcis.2012.09.049 ↗
24. Bismuth quantum dots as an optical saturable absorber for a 1.3 μm Q-switched solid-state laser10.1364/AO.58.001621 ↗
25. Size-tunable bismuth quantum dots for self-powered photodetectors under ambient conditions10.1088/1361-6528/ac96f9 ↗
26. Universal approach to magnetic second-order topological insulator10.1103/PhysRevLett.125.056402 ↗
27. In-plane electric and exchange fields engineered corner state bismuthene quantum dots10.1016/j.physb.2021.413641 ↗
28. Single and bilayer bismuthene: Stability at high temperature and mechanical and electronic properties10.1103/PhysRevB.94.014115 ↗
29. Electronic properties of novel bismuthene nanosheets with adsorption studies of G-series nerve agent molecules - a DFT outlook10.1016/j.physleta.2019.125975 ↗
30. Electronic structure of the semimetals Bi and Sb10.1103/PhysRevB.52.1566 ↗
31. Slater · Phys. Rev. · 1954 · 94 · 149810.1103/PhysRev.94.1498 ↗
32. Stable nontrivial Z2 topology in ultrathin Bi (111) films: a first-principles study10.1103/PhysRevLett.107.136805 ↗
33. One-dimensional topological edge states of bismuth bilayers10.1038/nphys3048 ↗
34. Orbital magnetization of quantum spin hall insulator nanoparticles10.1021/acs.nanolett.5b01805 ↗
35. Quantum spin hall effect and enhanced magnetic response by spin–orbit coupling10.1103/PhysRevLett.97.236805 ↗