Role of temperature in the formation of induced magnetic anisotropy during ion-beam synthesis of iron silicides
Source abstract
Abstract
Thin films with the uniaxial magnetic anisotropy were synthesized by Fe + implantation into single-crystal silicon in the external magnetic field. The induction of the magnetic anisotropy is due to the directional atomic pair ordering (Néel-Taniguchi model). The applicability of this model is confirmed by experiments on the rotation of the direction of the easy magnetization axis by repeated low-dose implantation in an external magnetic field. The induced anisotropy is formed in the collisions cascade region characterized by the so-called «dynamic temperature». The value of the dipole interaction coefficient, calculated taking into account the dynamic temperature, agrees with the results obtained in other works. The value of anisotropy constant is inversely proportional to temperature. Possible mechanism leading to such dependency is discussed.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and interfaces · Microstructure and mechanical properties · Magnetic properties of thin films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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