The magnetic properties of Mn5Ge3 thin films grown on PMN-PT
Source abstract
Abstract
Abstract The authors report the thickness dependent structural and magnetic properties of Mn5Ge3 thin films with different Mn layer thicknesses in the range from 5 nm to 30 nm deposited on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) substrates using solid phase epitaxy. Gradual decrease of the surface roughness due to the formation of larger grains, as well as the decrease of the coercivity and squareness ratio on increasing of Mn layer thickness has been observed. It has been revealed that the slightly greater value of the saturation magnetization than the corresponding one observed early for thin films and bulk samples is associated with the presence of structural defects. The ferromagnetic resonance (FMR) spectra have been obtained to be isotropic for the films with 5 nm thickness, whereas those registered from the films with the thicknesses of 10 nm and above demonstrated in-plane magnetic anisotropy, which have been interpreted as to be resulted from magnetocrystalline anisotropy as well as the stress-induced magnetic anisotropy. These results are suggested to create a major interest in the development of magnetoelectric heterostructured devices based on strain coupling that are compatible with CMOS technology.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Magnetic properties of thin films · Magnetic and transport properties of perovskites and related materials · Magnetic Properties and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (39)
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1. R.P. Panguluri, C. Zeng, H.H. Weitering, J.M. Sullivan, S.C. Erwin, B. Nadgorny, Spin polarization and electronic structure of ferromagnetic Mn5Ge3 epilayers, Phys. Status Solidi Basic Res. 242 (2005). No. 8, R67–R69 https://doi.org/10.1002/pssb.200510030.10.1002/pssb.200510030 ↗
2. Spin transfer torques in MnSi at ultralow current densities10.1126/science.1195709 ↗
3. Interstitial atom engineering in magnetic materials10.3390/met10121644 ↗
4. Energetic stability and magnetic properties of Mn dimers in silicon10.1063/1.1688002 ↗
5. Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111)
6. Ferromagnetic resonance and magnetic damping in C-doped Mn5Ge310.1088/0022-3727/49/4/045001 ↗
7. Electrical spin injection and detection in Mn5Ge3/Ge/Mn5Ge3 nanowire transistors10.1021/nl401238p ↗
8. First-principles characterization of ferromagnetic Mn5Ge3 for spintronic applications10.1103/PhysRevB.70.235205 ↗
9. B. Toydemir Yasasun, A.C. Onel, I. Gunduz Aykac, M.A. Gulgun, L. Colakerol Arslan, Effect of Ge layer thickness on the formation of Mn5Ge3 thin film on Ge/Si (1 1 1), J. Magn. Magn. Mater. 473 (2019) 348–354. https://doi.org/10.1016/j.jmmm.2018.10.096.10.1016/j.jmmm.2018.10.096 ↗
10. High Curie temperature Mn5Ge3 thin films produced by non-diffusive reaction10.1063/1.4976576 ↗
11. Role of the substrate temperature on the growth of Mn5Ge3 thin films by co-deposition of Mn and Ge on Ge(001) substrates by magnetron sputtering10.1016/j.tsf.2016.07.066 ↗
12. Epitaxial growth and magnetic properties of Mn5 Ge3 /Ge and Mn5Ge3Cx/Ge heterostructures for spintronic applications Related content An unusual phenomenon of surface reaction observed during Ge overgrowth on Mn5Ge3 /Ge(111) heterostructures10.1088/2043-6262/4/4/043002 ↗
13. Carbon concentration, Curie temperature, and magnetic resonance field of Mn5Ge3 (C) thin films10.1016/j.mtla.2019.100487 ↗
14. Strongly enhanced Curie temperature in carbon-doped Mn5Ge3 films10.1016/S0304-8853(00)00494-7 ↗
15. Mn5Ge3 films grown on Ge(1 1 1)-c(2 × 8)10.1016/j.susc.2011.01.002 ↗
16. Solid-state synthesis and characterization of ferromagnetic Mn5Ge3 nanoclusters in GeO/Mn thin films10.1016/j.jallcom.2018.12.126 ↗
17. Epitaxial Mn5Ge3 (100) layer on Ge (100) substrates obtained by flash lamp annealing10.1063/1.5057733 ↗
18. İ. Gündüz Aykaç, A.C. Önel, B. Toydemir Yaşasun, L. Çolakerol Arslan, Magnetic properties of Mn doped crystalline and amorphous Ge thin films grown on Si (111), Turkish J. Phys. 44 (2020) 67–76. https://doi.org/10.3906/fiz-1909-17.10.3906/fiz-1909-17 ↗
19. Mn5Ge3 ultra-thin films on GaAs (111)B substrates: Influence of initial growth conditions10.1016/j.spmi.2020.106745 ↗
20. Strain-induced modification in the magnetic properties of Mn5Ge3 thin films10.1063/1.4817372 ↗
21. Selective modification of the unquenched orbital moment of manganese introduced by carbon dopant in epitaxial Mn5Ge3C0.2/Ge(111) films10.1103/PhysRevB.101.094401 ↗
22. M. Petit, L. Michez, C.E. Dutoit, S. Bertaina, V.O. Dolocan, V. Heresanu, M. Stoffel, V. Le Thanh, Very low-temperature epitaxial growth of Mn5Ge3 and Mn5Ge3C0.2 films on Ge(111) using molecular beam epitaxy, Thin Solid Films. 589 (2015) 427–432. https://doi.org/10.1016/j.tsf.2015.05.068.10.1016/j.tsf.2015.05.068 ↗
23. Simulation of the enhanced Curie temperature in Mn5Ge3Cx compounds10.1063/1.3134482 ↗
24. Magnetic and magnetocaloric properties of Mn5Ge3-xSbx10.1016/S0925-8388(01)01935-1 ↗
25. S. Zhang, Y.G. Zhao, P.S. Li, J.J. Yang, S. Rizwan, J.X. Zhang, J. Seidel, T.L. Qu, Y.J. Yang, Z.L. Luo, Q. He, T. Zou, Q.P. Chen, J.W. Wang, L.F. Yang, Y. Sun, Y.Z. Wu, X. Xiao, X.F. Jin, J. Huang, C. Gao, X.F. Han, R. Ramesh, Electric-field control of nonvolatile magnetization in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 structure at room temperature, Phys. Rev. Lett. 108 (2012), 137203. https://doi.org/10.1103/PhysRevLett.108.137203.10.1103/PhysRevLett.108.137203 ↗
26. Direct observation of magnetism controlled by electric fields for CoFeB mesoscopic islands on PMN-PT10.1063/1.5086462 ↗
27. Magnetic anisotropy and magnetic domain structure in C-doped Mn5Ge310.1063/1.4927423 ↗
28. Ferromagnetic resonance in Mn5Ge3 epitaxial films with weak stripe domain structure10.1088/1361-6463/aa5ce5 ↗
29. Olive-M ́ Endez, Strong magnetization and anisotropy of Mn5Ge3 thin films on Ge(001), J. Phys. Condens. Matter10.1088/1361-648X/abe81a ↗
30. Effect of substrate roughness on microstructure, uniaxial anisotropy, and coercivity of Co/Pt multilayer thin films10.1063/1.356810 ↗
31. Effect of surface roughness on magnetic domain wall thickness, domain size, and coercivity10.1063/1.1331065 ↗
32. Thermal stability of epitaxial M Mn5Ge3 and carbon-doped Mn5Ge3 films10.1063/1.3638472 ↗
33. Interfacial spin-glass-like state in Mn5Ge3 single crystalline films grown on germanium substrates10.1103/PhysRevB.91.214425 ↗
34. A. Spiesser, F. Virot, L.-A. Michez, † R Hayn, S. Bertaina, L. Favre, M. Petit, V. Le Thanh, Magnetic anisotropy in epitaxial Mn5Ge3 films, Phys. Rev. B. 86 (2012) 35211. https://doi.org/10.1103/PhysRevB.86.035211.10.1103/PhysRevB.86.035211 ↗
35. Structure and Magnetism of Mn5Ge3 Nanoparticles10.3390/nano8040241 ↗
36. Magnetic reversal in Mn5Ge3 thin films: An extensive study10.1088/0953-8984/27/26/266001 ↗
37. Evidence of a perpendicular magnetocrystalline anisotropy in a Mn5Ge3 epitaxial thin film revealed by ferromagnetic resonance10.1103/PhysRevB.90.224415 ↗
38. Epitaxial mosaic-like Mn5Ge3thin films on Ge(001) substrates10.1016/j.jallcom.2018.05.209 ↗
39. G. Herzer, The Random Anisotropy Model, in: Prop. Appl. Nanocrystalline Alloy. from Amorph. Precursors, Springer-Verlag, 2005: pp. 15–34. https://doi.org/10.1007/1-4020-2965-9_2.10.1007/1-4020-2965-9_2 ↗