Some device implications of voltage controlled magnetic anisotropy in Co/Gd2O3 thin films through REDOX chemistry
Source abstract
Abstract
Abstract The effect of intermediate interfacial oxidation on the in-plane magnetization of multilayer stack Pt/Co/Gd 2 O 3 , on a p-type silicon substrate, has been investigated by magneto-optical Kerr effect (MOKE) measurements, the anomalous Hall effect, and magnetoresistance measurements. While voltage controlled perpendicular magnetic anisotropy of a metal/oxide heterostructure is known, this heterostructure displays an inverse relationship between voltage and coercivity. The anomalous Hall effect demonstrates a significant change in hysteresis, with the applied bias sign. There is a higher perpendicular magnetic anisotropy with positive bias exposure.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Magnetic properties of thin films · ZnO doping and properties · Multiferroics and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (45)
Show source-provided references
1. Magnetoelectronics with magnetoelectrics10.1088/0953-8984/17/2/L06 ↗
2. Multiferroics: towards a magnetoelectric memory10.1038/nmat2189 ↗
3. Kleemann · 2013 · 16310.1007/978-3-642-32042-2_5 ↗
4. Magnetoelectric spintronics10.1063/1.4811823 ↗
5. Perspectives of voltage control for magnetic exchange bias in multiferroic heterostructures10.1016/j.physleta.2017.01.065 ↗
6. N. Sharma, A. Marshall, J.P. Bird, P.A. Dowben, Magneto-Electric Magnetic Tunnel Junction as process adder for non-volatile memory applications, Proceedings on IEEE Xplore; Circuits and Systems Conference (DCAS), 2015 IEEE Dallas (2015) 978-1-4673-7980-9/15. doi: 10.1109/DCAS.2015.7356588.10.1109/DCAS.2015.7356588 ↗
7. Compact-device model development for the energy-delay analysis of magneto-electric magnetic tunnel junction structures10.1088/0268-1242/31/6/065022 ↗
8. Nishtha Sharma, Andrew Marshall, Jonathan Bird, Peter Dowben, Multi-bit Adder Design using the Compact Model of the ME-MTJ device and its Derived Structures, in: The 11th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) 2016, IEEE Explore (2017) 89-92, INSPEC Accession number 16580073. doi: 10.1109/ASDAM.2016.7805902.10.1109/ASDAM.2016.7805902 ↗
9. N. Sharma, J. Bird, P.A. Dowben, A. Marshall, Magneto-Electric Magnetic Tunnel Junction based Circuit Options, submitted, proceedings of the ISLPED 2017-IEEE/ACM International Symposium on Low Power Electronics and Design, 2017 July 24-26 @ Taipei, Taiwan.10.1109/SOCC.2017.8226032 ↗
10. Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices10.1063/1.3527962 ↗
11. Benchmarking of beyond-CMOS exploratory devices for logic integrated circuits10.1109/JXCDC.2015.2418033 ↗
12. N. Sharma, A. Marshall, P. Dowben, Unipolar Magnetoelectric Magnetic Tunnel Junction (UMMTJ) Devices and Circuits, in: 17th IEEE International Conference on Nanotechnology (IEEE NANO 2017), IEEE Xplore (2017), in press.10.1109/NANO.2017.8117352 ↗
13. N. Sharma, A. Marshall, P. Dowben, UMMTJ (Unipolar Magnetoelectric Magnetic Tunnel Junction), disclosed 9/26/16, Provisional patent pending; USPTO issued January 23, 2017; application Serial Number 62/449,199; SRC IP1586N.
14. Reversible control of Co magnetism by voltage-induced oxidation10.1103/PhysRevLett.113.267202 ↗
15. Large voltage induced modification of spin-orbit torques in Pt/Co/GdOx10.1063/1.4903041 ↗
16. Magneto-ionic control of interfacial magnetism10.1038/nmat4134 ↗
17. Structural and magnetic depth profiles of magneto-ionic heterostructures beyond the interface limit10.1038/ncomms12264 ↗
18. Assessment of Rashba field effects in ultrathin Pt/Co/GdOx submicrometer strips10.1109/TMAG.2013.2251459 ↗
19. Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions10.1063/1.3279157 ↗
20. Electric field control of domain wall propagation in Pt/Co/GdOx films10.1063/1.4712620 ↗
21. Interfacial current-induced torques in Pt/Co/GdOx10.1063/1.4737899 ↗
22. Voltage-gated modulation of domain wall creep dynamics in an ultrathin metallic ferromagnet10.1063/1.4764071 ↗
23. Perpendicular magnetic anisotropy in Pd/Co and Pt/Co thin‐film layered structures10.1063/1.340404 ↗
24. Origin of perpendicular magnetic anisotropy in epitaxial Pd/Co/Pd(111) trilayers10.1103/PhysRevB.95.064430 ↗
25. Strength of perpendicular magnetic anisotropy at bottom and top interfaces in [Pt/Co/Pt] trilayers10.1109/LMAG.2014.2321350 ↗
26. Interface-induced phenomena in magnetism10.1103/RevModPhys.89.025006 ↗
27. Perpendicular magnetic anisotropy and magneto-optical Kerr effect of vapor-deposited Co/Pt-layered structures10.1063/1.343189 ↗
28. Temperature-dependent perpendicular magnetic anisotropy of Co-Pt on Cr2O3 antiferromagnetic oxide10.1063/1.4850533 ↗
29. Influence of thermal annealing on the perpendicular magnetic anisotropy of Pt/Co/AlOx trilayers10.1103/PhysRevB.79.024423 ↗
30. Exchange biasing and interlayer coupling in Co/Pt/Co/CoO multilayers with perpendicular anisotropy10.1016/j.tsf.2016.12.052 ↗
31. X-ray analysis of the magnetic influence of oxygen in Pt/Co/AlOx trilayers10.1063/1.2829896 ↗
32. Analysis of oxygen induced anisotropy crossover in Pt/Co/MOx trilayers10.1063/1.2969711 ↗
33. Unveiling the role of Co-O-Mg bond in magnetic anisotropy of Pt/Co/MgO using atomically controlled deposition and in-situ electrical measurement10.1103/PhysRevB.95.094417 ↗
34. Interlayer exchange coupling in [Pt/Co]n/MgO/[Co/Pt]2 perpendicular magnetic tunnel junctions10.1063/1.4896186 ↗
35. Magnetic tunnel junctions using Co/Pt multilayered free layers with perpendicular magnetic anisotropy10.1088/1742-6596/303/1/012100 ↗
36. Switching characteristics of submicrometer magnetic tunnel junction devices with perpendicular anisotropy10.1063/1.1854282 ↗
37. Magnetic coupling in Co/Cr2O3/CrO2 “trilayer” films10.1063/1.1558212 ↗
38. Volobuev · 2013
39. John Kerr and his effects found in 1877 and 187810.1080/09500830802526604 ↗
40. Anisotropic magnetotransport properties of cobalt thin films10.1016/0304-8853(94)01564-3 ↗
41. Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions10.1103/PhysRevLett.74.3273 ↗
42. P.A. Dowben, Ch. Binek, D. E. Nikonov, Potential of nonvolatile magnetoelectric devices for spintronic applications, Chapter 11 in Nanoscale Silicon Devices; edited by Shuni Oda and David Ferry; Taylor and Francis (London) (2016) pp. 255–278, ISBN 9781482228670.
43. Magnetoelectric charge trap memory10.1021/nl204114t ↗
44. Controllable positive exchange bias via redox-driven oxygen migration10.1038/ncomms11050 ↗
45. The ionic conductivity in lithium-boron oxide materials and its relation to structural, electronic and defect properties: insights from theory