A new Hall-effect enabled voltage amplifier device based on magnetic and thermal properties of materials
Source abstract
Abstract
Abstract In this paper, a voltage amplifier device is proposed based on the Hall effect principle. Existing method based on this principle requires large magnetic field, but it is limited due to saturating effect of magnetic field on output. Therefore, the technique presented in this paper provides amplification control by changing applied stress on the material placed in a magnetic field. This device has the ability to produce large amplification (theoretically infinite). The effect of the choice of material based on magnetic properties and effect of stress on geometrical dimensions is also studied. The undesired effect of temperature rise on the device is also studied in detail, and compensation techniques are proposed. This paper shall substantially contribute to designing such amplifiers based on Hall effect to someday pose a challenge to op-amp technology.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Magnetic Field Sensors Techniques · Plasma Diagnostics and Applications · Magnetic properties of thin films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (32)
Show source-provided references
1. On a new action of the magnet on electric currents10.2307/2369245 ↗
2. Hall-Effect Sensors
3. Hall effect devices10.1002/j.1538-7305.1959.tb03909.x ↗
4. Hall’s effect and its application in measurement techniques10.1007/BF00977731 ↗
5. The hall effect in yttrium, lanthanum, cerium, praseodymium, neodymium, gadolinium, dysprosium, and erbium10.1103/PhysRev.91.1372 ↗
6. Hall effect in Lu, Yb, Tm and Sm10.1103/PhysRev.111.1257 ↗
7. Hall effect, resistivity, and magnetoresistivity of Th, U, Zr, Ti, and Nb10.1103/PhysRev.114.969 ↗
8. The hall effect circulator-a passive transmission device
9. The hall effect in silicon circuits10.1007/978-1-4757-1367-1_16 ↗
10. R.G. Burig, E.A. Petrocelli, Hall effect proximity transducer (July 1965).
11. O. Petruk, R. Szewczyk, J. Salach, M. Nowicki, Digitally controlled current transformer with hall sensor, Adv. Intell. Syst. Comput. 267, 641.https://doi.org/10.1007/978-3-319-05353-0_61.10.1007/978-3-319-05353-0_61 ↗
12. A GaAs integrated hall sensor/amplifier10.1109/EDL.1986.26352 ↗
13. GaAs integrated hall sensor with temperature-stabilised characteristics up to 300C10.1049/el:19891002 ↗
14. J. Ricouard, B. Schorter, Hall effect apparatus for determining the angular position of a rotating part (April 1978).
15. Integrated hall-effect magnetic sensors10.1016/S0924-4247(01)00478-2 ↗
16. Highly sensitive hall magnetic sensor microsystem in CMOS technology10.1109/4.982421 ↗
17. G. Patronis, Handbook for Sound Engineers, Howard W. Sams & Co., 1987, Ch. Amplifiers.
18. Relations between attenuation and phase in feedback amplifier design10.1002/j.1538-7305.1940.tb00839.x ↗
19. R.L. Boylestad, L. Nashelsky, Electronic Devices and Circuit Theory, 10th ed., Pearson.
20. The monolithic op amp: a tutorial study10.1109/JSSC.1974.1050524 ↗
21. An amplifier based on the hall effect10.1038/175518b0 ↗
22. Electronic amplifier based on hall effect principle
23. K.I. Arai, K. Ishiyama, Recent developments of new soft magnetic materials, J. Magn. Magn. Mater. 133.https://doi.org/10.1016/0304-8853(94)90534-7.10.1016/0304-8853(94)90534-7 ↗
24. Electronic structure and magnetism of Gd5(Si, Ge)4 compounds10.1016/S0304-8853(98)00904-4 ↗
25. Half-metallicity and magnetism of quaternary heusler compounds CoRuTiZ (Z=Si, Ge, and Sn)10.1016/j.jmmm.2016.10.020 ↗
26. J. Hasler, Analog architecture complexity theory empowering ultra-low power configurable analog and mixed mode soc systems, J. Low Power Electron. Appl. 9.https://doi.org/10.3390/jlpea9010004.10.3390/jlpea9010004 ↗
27. Ueber das auftreten electromotorischer kräfte in metallplatten, welche von einem wärmestrome durchflossen werden und sich im magnetischen felde befinden10.1002/andp.18862651010 ↗
28. M. Kachniarz, O. Petruk, R. Szewczyk, Methodology of reduction of the offset voltage in hall-effect sensors, in: Challenges in Automation, Robotics and Measurement Techniques, 2016, pp. 763–770.10.1007/978-3-319-29357-8_66 ↗
29. Compensation of the piezo-hall effect in integrated hall sensors on (100)-Si10.1109/JSEN.2007.907039 ↗
30. High-temperature hall coefficient in GaAs10.1063/1.1735727 ↗
31. A model of temperature-dependent young’s modulus for ultrahigh temperature ceramics10.1155/2011/791545 ↗
32. Temperature dependence of the young’s modulus and shear modulus of pure nickel, platinum, and molybdenum10.1007/BF02644859 ↗