Temperature dependence of GMR profiles in N-ion implanted spin valve

Abstract The temperature dependence of giant magnetoresistance (GMR) profiles has been measured in the N-ion implanted spin valves. The N-ion implantation significantly reduces the exchange coupling field H ex , which causes the change of magnetoresistance (MR) profile after the ion implantation. The broadening and shifting of the peaks of MR profiles with decreasing temperature are dominantly affected by the increase of coercive field H c of pinned layer.