Ion implantation of magnetic thin films and nanostructures

Abstract This work presents a study of Ga+ ion implantation of polycrystalline hcp cobalt thin films and nanostructures. It is shown that Ga+ ion implantation leads to a substantial modification of magnetic properties including large coercivity increase and shearing of in-plane magnetization loops suggesting the introduction of domain wall pinning sites and the reduction of intergranular exchange coupling. Because ion implantation can be accompanied by substantial heat dissipation, it is discussed how the annealing effects can be minimized. Application of ion implantation to selectively tailor properties of magnetic nanostructures is demonstrated.