Reciprocal and non-reciprocal electromagnetic wave propagation in sub-100 nm epitaxial YIG thin films deposited under different oxygen growth pressure

Directional dependent transport of information in magnetic thin films offers a great opportunity to realize reciprocal and nonreciprocal microwave devices, such as filters, phase shifter, isolators and circulators. Electromagnetic wave (EM) propagation in sub-100 nm thin magnetic film is critical, yet reciprocal and non-reciprocal wave propagation and its accurate measurements remain a challenge. We investigated reciprocal and non-reciprocal wave propagation in 90 nm thick epitaxial thin films of yttrium iron garnet (Y ₃Fe ₅O ₁₂:YIG) grown by pulse laser deposition (PLD) technique on gadolinium gallium garnet [GGG(1 0 0)] substrates. The effect of oxygen growth pressure during deposition of YIG films exhibit directional dependence properties of electromagnetic wave propagation. The reciprocal EM wave propagation was generated by a S-type transmission line to achieve microwave (RF) magnetic fields ( h R F ) perpendicular to applied dc magnetic fields ( H D C ), to ensure the ferromagnetic resonance (FMR) condition. The center frequency is tuned up to 20 GHz with an applied magnetic field of 6 kOe. The tuning of the center frequency was achieved as of 85.3 % with H _DC of 6 kOe. To achieve non-reciprocal EM-wave propagation one straight microstrip line was used to ensures a parallel configuration (parallel pumping FMR condition) of h R F to H D C . The nonreciprocity observed is due to the presence of gyrotropic properties in the YIG thin films and it enhances when YIG film was placed in asymmetric geometry. Further, oxygen growth pressure (>0.1 mbar) grown YIG films enhances the nonreciprocity by 21.6 %. The experimental results were successfully validated using high-frequency structure simulator (HFSS). Hence, these results indicate that controlled deposition parameters can be a crucial parameter in the design of reciprocal and nonreciprocal microwave signal processing devices.