Quantum Hall effect in n-InGaAs/InAlAs metamorphic nanoheterostructures with high InAs content
Source abstract
Abstract
Abstract For an investigation of the quantum Hall effect on n-In0.85Ga0.18As/In0.82Al0.82As metamorphic nanoheterostructures with high InAs content the longitudinal and Hall magnetoresistances were measured in magnetic fields up to 9 T at T = ( 1.8 ÷ 30 ) K . The results for a temperature dependence of conductivity on the delocalized states at the center of Landau level were analysed within the scaling concept for a plateau-plateau transition in quantum Hall regime.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Quantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Surface and Thin Film Phenomena
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References (14)
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