Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions
Source abstract
Abstract
Abstract Magnetic tunnel junctions (MTJs) comprising amorphous Co 70.5 Fe 4.5 Si 15 B 10 , possessing low saturation magnetization of 560 emu/cm 3 , as a free layer have been investigated. The switching behaviours were confirmed for the micrometer-sized elements experimentally, using the scanning magneto-optical Kerr effect (scanning MOKE). A micromagnetic modelling study was also carried out for the submicrometer-sized elements. By using either a CoFeSiB single or a synthetic antiferromagnetic free-layer structure, the magnetization switching field became much lower than conventionally used CoFe free layered MTJs.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Magnetic properties of thin films · Magneto-Optical Properties and Applications · Metallic Glasses and Amorphous Alloys
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References (5)
Show source-provided references
1. Kim · J. Magn. Magn. Mater. · 2004 · 282 · 23210.1016/j.jmmm.2004.04.052 ↗
2. Chun · Appl. Phys. Lett. · 2005 · 8710.1063/1.2033128 ↗
3. Rhee · IEEE Trans. Magn. · 2005 · 41 · 268510.1109/TMAG.2005.855296 ↗
4. See LLG Micromagnetics Simulator™ from http://llgmicro.home.mindspring.com.
5. B. S. Chun, S. P. Ko, B. S. Oh, J. Y. Hwang, J. R. Rhee, T. Kim, S. Saito, S. Yoshimura, M. Tsunoda, M. Takahashi, Y. K. Kim, J. Magn. Magn. Mater. (2006), in press.