journal article·2015-10

The magnetism and electronic transport properties of Mn3Sn1Si C

Yongchun Wen, Cong Wang, Man Nie, Ying Sun

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Abstract

Abstract The lattice, magnetic and electronic transport properties of the compounds Mn 3 Sn 1 −x Si x C (0≤ x ≤0.4) are investigated. The results have shown that Si-doping in the antiperovskite Mn 3 SnC induces the decrease of the nearest neighbouring Mn–Mn bond distance of Mn 3 Sn 1− x Si x C, and the magnetic structure transforms from ferrimagnetic to antiferromagnetic when x ≥0.2. With the increase of Si, the Neel temperature T N rises. The T N of Mn 3 Sn 1− x Si x C( x =0.2, 0.3, 0.4) are 217 K, 257 K and 290 K, respectively. However, the magnetovolume effect is quenched. In Mn 3 SnC and Mn 3 Sn 1− x Si x C ( x =0.2, 0.3, 0.4) compounds, there exists an anomalous increase in resistivity at a certain temperature that coincides well with their Curie temperature T C or Neel temperature T N . The temperature dependence of the resistivity of Mn 3 Sn 1− x Si x C ( x =0, 0.2, 0.3, 0.4) exhibits semiconducting-like behavior at low temperature and metallic-like behavior at high temperature.
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OpenAlex topics: Thermal Expansion and Ionic Conductivity · Advanced Battery Materials and Technologies · Microwave Dielectric Ceramics Synthesis

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