Structural, magnetic and Magneto-transport properties of Mn-doped SiGe thin films
Source abstract
Abstract
Mn-doped polycrystalline SiGe thin films are fabricated by radio frequency magnetron sputtering and subsequent rapid thermal annealing. Structural characterizations show that the Mn atoms are distributed uniformly in the SiGe matrix and mainly occupy the substitutional sites with 2+ state. X-ray magnetic circular dichroism signals reveal the spin and orbital magnetic moment information of the samples. Magnetic measurements show that the Curie temperature is up to ∼ 290 K and the effective magnetic moment is about 1.57 μ B /Mn. Magneto-transport measurements reveal anomalous Hall effect, another signal of ferromagnetism in the samples. Our results provide insights into the structure and the ferromagnetism of the Mn-doped SiGe thin films and may be useful for related spintronic applications.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Magnetic properties of thin films · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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