Anomalous temperature dependence of the magnetoresistance in vertical Ni/graphene/Ni junctions
Source abstract
Abstract
Abstract Considering the nickel has an almost perfect in-plane lattice constant match with graphene, vertical Ni/graphene/Ni junctions are fabricated and characterized in this article. In order to improve the interface quality, we employ a modified fabrication process of depositing the ferromagnetic (FM) material on both sides of a suspended graphene membrane assisted with rotating the sample with a slant angle during the bottom FM film growth. The magnetoresistance (MR) ratio of about 0.1% with a low resistance-area product (RA) of 30 Ω·μm2 is obtained at room temperature and the device shows a typical metallic behavior with the linear I-V characteristic and T2-typical temperature dependence of the resistance. Interestingly, the temperature dependence of the MR displays an unusual behavior as the MR ratio reduces with the decreasing temperature, which we believe is due to the antiferromagnetic coupling between the two FM layers competing with the dipole field.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Graphene research and applications · Quantum and electron transport phenomena · Magnetic properties of thin films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (37)
Show source-provided references
1. Spintronics: a spin-based electronics vision for the future10.1126/science.1065389 ↗
2. Strategies for pTesla field detection using magnetoresistive sensors with a soft pinned sensing layer
3. Giant spin-torque diode sensitivity in the absence of bias magnetic field10.1038/ncomms11259 ↗
4. Neuromorphic computing with nanoscale spintronic oscillators10.1038/nature23011 ↗
5. The rise of graphene10.1038/nmat1849 ↗
6. Graphene: status and prospects10.1126/science.1158877 ↗
7. Graphene spintronics10.1038/nnano.2014.214 ↗
8. Magnetization reversal and spintronics of Ni/Graphene/Co induced by doped graphene
9. Magnetoresistance and negative differential resistance in Ni/graphene/Ni vertical heterostructures driven by finite bias voltage: a first-principles study10.1103/PhysRevB.85.184426 ↗
10. Magnetoresistance in fcc Ni/graphene/fcc Ni (111) junctions10.1103/PhysRevB.85.094420 ↗
11. Theoretical prediction of perfect spin filtering at interfaces between close-packed surfaces of Ni or Co and graphite or graphene10.1103/PhysRevB.78.195419 ↗
12. Graphite and graphene as perfect spin filters10.1103/PhysRevLett.99.176602 ↗
13. Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene10.1088/2053-1583/aa7452 ↗
14. Magnetic tunnel junctions with single-layer-graphene tunnel barriers10.1103/PhysRevB.89.184418 ↗
15. Graphene-based magnetic tunnel junctions10.1109/TMAG.2013.2245107 ↗
16. Negative magnetoresistance in a vertical single-layer graphene spin valve at room temperature10.1021/am4049145 ↗
17. Magnetotransport properties of a few-layer graphene-ferromagnetic metal junctions in vertical spin valve devices10.1063/1.4918957 ↗
18. Spin valve effect of NiFe/graphene/NiFe junctions10.1007/s12274-013-0314-x ↗
19. Graphene in multilayered CPP spin valves10.1109/TMAG.2008.2003065 ↗
20. Room-temperature spin filtering in metallic ferromagnet–multilayer graphene–ferromagnet junctions10.1021/acsnano.6b06092 ↗
21. Enhanced magnetoresistance in graphene spin valve10.1016/j.jmmm.2017.01.059 ↗
22. Magnetoresistance effect in Fe20Ni80/graphene/Fe20Ni80 vertical spin valves10.1063/1.4961669 ↗
23. Preparation and characterization of bottom ferromagnetic electrode for graphene based magnetic junction10.1016/j.jmmm.2015.10.113 ↗
24. Graphene-based synthetic antiferromagnets and ferrimagnets10.1038/s41467-017-00825-9 ↗
25. Magnetic coupling of porphyrin molecules through graphene10.1002/adma.201205275 ↗
26. Protecting nickel with graphene spin-filtering membranes: a single layer is enough10.1063/1.4923401 ↗
27. Spintronics technology and device development10.7567/JJAP.54.070101 ↗
28. Inelastic tunneling spectroscopy of magnetic tunnel junctions based on CoFeB/MgO/CoFeB with Mg insertion layer10.1063/1.2162047 ↗
29. Electric-field-assisted switching in magnetic tunnel junctions10.1038/nmat3171 ↗
30. Manipulation of magnetic anisotropy of Fe/graphene by charge injection10.1063/1.3697627 ↗
31. Temperature dependence of giant tunnel magnetoresistance in epitaxial Fe/MgO/Fe magnetic tunnel junctions10.1103/PhysRevB.78.180411 ↗
32. Temperature dependence of resistance in epitaxial Fe/MgO/Fe magnetic tunnel junctions10.1063/1.3194150 ↗
33. Temperature dependence of electrical transport and magnetization reversal in magnetic tunnel junction10.1109/TMAG.2010.2045354 ↗
34. Strong temperature dependence of the interlayer exchange coupling strength in Co/Cu/Co sandwiches10.1103/PhysRevB.56.2676 ↗
35. Using ferromagnetic resonance as a sensitive method to study temperature dependence of interlayer exchange coupling10.1103/PhysRevLett.73.336 ↗
36. Temperature dependence of tunnel magnetoresistance10.1063/1.1359229 ↗
37. Effect of finite magnetic film thickness on Néel coupling in spin valves10.1063/1.370376 ↗