High annealing tolerance and the microstructure study in perpendicular magnetized MgO/CoFeB/MgO structures with thin W spacer layer
Source abstract
Abstract
Abstract In Magnetic tunnel junctions, which are applied in spintronic devices, the key issue is low thermal stability. Here, we study the influence of a W spacer on the perpendicular magnetic anisotropy (PMA) at temperatures up to 525 °C in perpendicular magnetized MgO/CoFeB/MgO structures with thin W spacer. High-resolution transmission electron microscopy (HRTEM) analysis shows that the MgO layers are partially crystallized and a significant diffusion of the small number of W elements is detected. The X-ray photoelectron spectroscopy (XPS) indicates that some WOx compounds were reduced to metallic W and part of MgO were reduced to Mg during annealing. The oxygen released by WOx and MgO combined with Fe and Co, thereby more Fe and Co oxides were formed and thus benefiting the perpendicular magnetic anisotropy (PMA).
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Magnetic properties of thin films · ZnO doping and properties · Magnetic Properties and Synthesis of Ferrites
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References (23)
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