Position dependence of domain wall resistance in magnetic nanobridge

Abstract Nanobridge (NB) is a single-layer ferromagnetic film structure composed of two wide leads connected by a nanometer channel; due to its magnetic and magnetoresistive properties NBs are considered attractive from fundamental point of view and for applications. In the present report the dependence of the domain wall (DW) specific resistance on the position within the crossbar is obtained within the frame of the spin-accumulation model. It was revealed that the DW specific resistance diminishes appreciably if DW approaches one of the leads. Consequences of this result are discussed.