Influence of quantum well states on transport properties of double barrier junctions
Source abstract
Abstract
Abstract A strong asymmetric behavior in the I–V characteristics and the tunnel magnetoresistance in asymmetric magnetic double-barrier junctions is predicted. This effect relates to formation of quantum well states in the middle metallic layer. The influence of the random fluctuations of the barrier and the middle metallic layer thickness on the statistics of resonant levels is investigated.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Magnetic properties of thin films · Surface and Thin Film Phenomena · Quantum and electron transport phenomena
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References (8)
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