Photo-magneto-electric effect in semi-insulating GaAs: carrier lifetimes and influence of the defect structure
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OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and devices · Quantum and electron transport phenomena
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References (32)
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1. E.M. Swiggard: IEEE Proc.131, 26 (1984)
2. N.G. Einspruch, W.R. Wisseman (eds):VLSI Electronics Microstructure Science GaAs Microelectronics, Vol. 11 (Academic, Orlando 1985)
3. S. Gourrier:Analog and Microwave Monolithic III-V ICs: Industrial and Technical Aspects, Inst. Phys. Conf. Ser. 112, 11 (Institute of Physics, Bristol 1990)
4. K. Kitahara, M. Ozeki, A. Schibatomi: Fujitsu Sci. Techn. J.19, 279 (1983)
5. V.P. Kalinushkin, V.V. Karataev, I.A. Koval'chuk, A.V. Markov, E.M. Omel'janovski, I.V. Stepancova: InProc. 10th All-Union Conf. on Semicond. Phys., Vol 2 (Minsk 1985) pp. 168–169 (in Russian)
6. D.J. Stirland, P. Gall, M.R. Brozel, L. Breivik, G.M. Williams, A.G. Cullis, J.P. Fillard, Inst. Phys. Conf. Series,112, 55 (Institute of Physics, Bristol 1990)
7. Z.M. Wang, J. Windsheif, D.J. As, W. Jantz: J. Appl. Phys.73, 1430 (1993)10.1063/1.353241 ↗
8. B. Pistoulet, P. Girard, G. Hamamdjian: J. Appl. Phys.58, 2268, 2275 (1984)10.1063/1.334260 ↗
9. B. Pistoulet, E.M. Roche, S. Abdalla: Phys. Rev. B30, 5987 (1984)10.1103/PhysRevB.30.5987 ↗
10. W. Siegel, G. Kuehnel, H. Witte, U. Kretzer: Mater. Sci. Forum143–147 1565 (1994)
11. J. Vaitkus, J. Grigoryev, V. Kažukauskas, V. Osvensky, J. Storasta: Sov. Phys. Coll.27, 15 (1987)
12. J. Vaitkus, R. Baubinas, V. Kažukauskas R. Kiliulis, J. Storasta: Inst. Phys. Conf. Ser.129 549 (Institute of Physics, Bristol 1993) Chap. 6
13. J. Vaitkus, V. Kažukauskas, R. Kiliulis, J. Storasta: Inst. Phys. Conf. Ser.136, 755 (Institute of Physics, Bristol 1994) Chap. 11
14. V. Kažukauskas, J. Vaitkus: Z. Phys. B94, 401 (1994)10.1007/BF01317402 ↗
15. J. Vaitkus, J. Storasta, R. Kiliulis, V. Kažukauskas:Point and Extended Defects in Nonequilibrium Carrier Transpport, Paper presented at the Fifth Int'l Seminar on Point Defects in Insulators and Deep-Level Centers in Semiconductors, Giessen, Germany (1994)
16. D.C. Look: InSemi-insulating III-V Materials (Hilger, Bristol 1988) pp. 1–10
17. R. Fornari, C. Paorici, L. Zanotti, G. Zuccalli: Acta Phys. Acad. Sci. Hung.57, 263 (1985)10.1007/BF03158897 ↗
18. J. Vaitkus, J. Storasta, A. Pincevičius, M. Petrauskas, V. Kažukauskas: Sov. Phys. Coll.28, 59 (1988)
19. V. Kažukauskas, R. Kiliulis.: Phys. Stat. Sol. (b)179, K21 (1993)10.1002/pssb.2221790131 ↗
20. J.I. Ravich:Photomagnetic Effect in Semiconductors and Its Application (Sovetskoje Radio, Moscow 1967) (in Russian)
21. D.C. Look: Phys. Rev. B16, 5460 (1977)10.1103/PhysRevB.16.5460 ↗
22. D. Aronov, V. Zaitova, E.P. Kotov: Phys. Status Solidi (b)43, 129 (1971)10.1002/pssb.2220430114 ↗
23. K. Seeger:Semiconductor Physics (Springer, Berlin Heidelberg 1973)10.1007/978-3-7091-4111-3 ↗
24. L.P. Pavlov:Determination Methods of the Main Parameters of Semiconducting Materials (Vysschaja Shkola, Moscow 1987) (in Russian)
25. R.A. Smith:Semiconductors, 2nd edn. (Cambridge Univ Press, Cambridge 1978)
26. G.J. Agraz, S.S. Li: Phys. Rev. B2, 1847 (1970)10.1103/PhysRevB.2.1847 ↗
27. T. Miyakawa, K. Tahira: Jpn. J. Appl. Phys.11, 379 (1972)10.1143/JJAP.11.379 ↗
28. V.V. Ostroborodova, M.S. Al Kuveit: Vestnik Mosk. Univ., Fiz. Astronomiya20, 36 (1979) (in Russian)
29. G.P. Peka:Physical Phenomena on Semiconductor Surface (Vishcha Shkola, Kiev 1984) (in Russian)
30. S. Cristoloveanu, K.N. Kang: J. Phys. C17, 699 (1984)10.1088/0022-3719/17/4/012 ↗
31. D.L. Barret, S. McGuigan, H.M. Hobgood, G.W. Ebbridge: J. Cryst. Growth70, 179 (1984)10.1016/0022-0248(84)90265-3 ↗
32. A.S. Jordan, E.M. Monberg, J.E. Clemans: J. Appl. Phys.73, 477 (1993)10.1063/1.353825 ↗