journal article·2008-10

Influence of cold-rolling texture and heating rate on {110}〈001〉 development in inhibitor-free 3%Si–Fe sheets

N.H. Heo, J.Y. Soh, J.M. Oh, S.B. Kim

Publisher page

Abstract

Abstract This paper presents cold-rolling and annealing methods to obtain a high-magnetic induction in inhibitor-free 0.1-mm-thick 3% silicon–iron sheets containing 18 or 150 ppm sulfur. In case of the two-step cold-rolling, the sheets containing 150 ppm sulfur showed a strong {1 0 0} final texture at 400 °C/h, and some fraction of {1 1 0} component was observed at 25 °C/h. However, three-step cold-rolling resulted in a sharp {1 1 0}〈0 0 1〉 final texture at 25 °C/h. This is due to the difference in intensity ratio of {1 0 0}〈0 1 1〉 to {1 1 1}〈1 1 2〉 in the cold-rolling texture which influences the nucleation of {1 1 0}〈0 0 1〉 component and the selective growth kinetics of various grains. In case of 18 ppm sulfur, the final texture was mainly composed of a sharp {1 1 0}〈0 0 1〉 component even at 400 °C/h, due to the relatively low segregation concentration.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Magnetic Properties and Applications · Microstructure and Mechanical Properties of Steels · Microstructure and mechanical properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (10)

Show source-provided references
1. Elban · Metall. Trans. A · 1975 · 6A · 192910.1007/BF02646858 ↗
2. Nakano · IEEE Trans. Mag. · 1999 · 35 · 337910.1109/20.800530 ↗
3. Heo · Acta Mater. · 2000 · 48 · 290110.1016/S1359-6454(00)00084-7 ↗
4. Heo · Scr. Mater. · 2005 · 52 · 40910.1016/j.scriptamat.2004.10.018 ↗
5. Heo · J. Korean Phys. Soc. · 2004 · 44 · 1547
6. Heo · Mater. Lett. · 2005 · 59 · 282710.1016/j.matlet.2005.04.040 ↗
7. Heo · Metall. Mater. Trans. A · 2006 · 37A · 168910.1007/s11661-006-0110-2 ↗
8. Jeong · J. Appl. Phys. · 2007 · 101 · 09N103-1
9. Kim · IEEE Trans. Mag. · 2002 · 38 · 319210.1109/TMAG.2002.802411 ↗
10. Kim · J. Appl. Phys. · 2005 · 97 · 10F914-1