The electron g factor in AlGaN/GaN quantum wells

Abstract Considering the Rashba and Zeeman effects, the effective Hamiltonian for electrons in AlGaN/GaN quantum wells (QWs) with the magnetic field is obtained, and the effective transverse and longitudinal g -factor ( g ⊥ , / / ) are derived. The small anisotropy of the g factor in bulk wurtzite materials is clearly shown, while the anisotropy in QWs induced by the quantum confined effect is evident. Moreover, the average g factor ( g *) depends greatly on the position of the origin along the growth axis ( c axis). With increasing well thickness, both g ⊥ and g / / increase, and the g -factor anisotropy first decreases and then increases slowly. Results show the g -factor and its anisotropy in III-nitride QWs can be modulated by the well thickness, and they are greatly affected by the internal electric field and the quantum confined effect.