Possible origin of room-temperature ferromagnetism in undoped GaN epilayers implanted with Mn ions

Manganese ions were implanted into unintentionally doped GaN epilayers grown by metal organic chemical vapor deposition (MOCVD). The (Ga,Mn)N and GaxMny phases were formed after Mn-implanted undoped GaN epilayers annealed at 700 and 800 1C. The samples showed ferromagnetic behavior at room temperature with the highest magnetization obtained in the sample annealed at 800 1C. Ferromagnetic signal reduces as annealing temperature increased above 900 1C. It is believed that the room-temperature ferromagnetic property of Mn-implanted undoped GaN epilayers are mainly from (Ga,Mn)N. The GaxMny phases play a critical role in providing holes and also contribute to increasing the ferromagnetic property.