journal article·2016-03Open access

Lattice sites, charge states and spin–lattice relaxation of Fe ions in 57 Mn + implanted GaN and AlN

H. Masenda, D. Naidoo, K. Bharuth-Ram, H.P. Gunnlaugsson, K. Johnston, R. Mantovan, T.E. Mølholt, M. Ncube, S. Shayestehaminzadeh, H.P. Gíslason, G. Langouche, S. Ólafsson, G. Weyer

Abstract

Copyright: 2015. SAGE Publications. Due to copyright restrictions, only the abstract is available. For access to the full text item, please consult the publisher's website. The definitive version of the work is published in Journal of Magnetism and Magnetic Materials. Vol 401, Pages 1130-1138. https://doi.org/10.1016/j.jmmm.2015.11.026
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Research context

OpenAlex topics: ZnO doping and properties · GaN-based semiconductor devices and materials · Semiconductor materials and devices

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