Composition dependence of crystallization temperature and magnetic property of NdFeB thin films

Abstract Si(1 0 0)/Mo(30 nm)/NdxFe92−xB8(800 nm)/Mo(30 nm) ( x = 14 , 20, 30) films are prepared by RF magnetron sputtering at room temperature. As-deposited films are amorphous materials. The crystallization temperature of the Nd2Fe14B phase decreases from 575 °C to 500 °C with increase of x from 14 to 20–30. The optimum annealing temperature with 30 min annealing time is 650 °C, 625 °C and 600 °C for x = 14 , 20 and 30, respectively, and the x = 20 film has the largest energy product of 18 MGOe.