Preparation of thick M-type barium hexaferrite films on double side of substrates by liquid-phase epitaxy deposition technique

Abstract Liquid-phase epitaxy deposition has been investigated to obtain thick and high quality of barium hexaferrite films on (1 1 1) gadolinium gallium garnet (GGG) and m-plane (1 1 0 0) aluminum oxide (Al 2 O 3 ) substrates. For films deposited on (1 1 1) GGG substrate the c -axis was aligned perpendicular to the film plane, but in the plane for films deposited on Al 2 O 3 . The films were deposited on both sides of the substrates, where the total thickness of the films ranged between 70 and 190 μm. The thickness and quality of these films meet the requirement for applications at high frequencies.