Transport and magnetotransport properties of Co thin films on Si
Source abstract
Abstract
Abstract Resistance, magnetoresistance and Hall effect were studied in sputtered cobalt films of varying thickness, deposited on silicon substrates, in the temperature range of 5–350 K and magnetic field up to 7 T. Contributions from both metallic cobalt and silicide layers are revealed. The latter undergo a metal–insulator transition in the temperature range of 260–280 K.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Magnetic properties of thin films · Semiconductor materials and interfaces · Surface and Thin Film Phenomena
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References (9)
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