Interfacial electronic structure and oxygen vacancy states in Fe/MgO/Fe tunneling junctions
Source abstract
Abstract
Abstract The electronic structure of an interface and oxygen vacancy states in Fe/MgO/Fe junctions is investigated, using first-principles calculations within the density functional theory. The magnetic moment of the interface Fe layer increases relative to that of bulk. The defect states in the Fe/MgO cluster containing oxygen vacancy induce no significant shift in the Fermi level.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Magnetic properties of thin films · ZnO doping and properties · Metal and Thin Film Mechanics
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References (11)
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