Magnetic and electric properties of Fe-doped ITO thin films

Abstract Films of Fe-doped ITO were epitaxially grown at oxygen (including 8% ozone) partial pressures of 5, 1, 1×10 −1 ,1×10 −2 , and 1×10 −3 Pa on yttria-stabilized zirconia substrates by a pulsed-laser deposition method. Magnetic and electric properties of the films varied systematically with the oxygen partial pressure. The films grown at 5 and 1 Pa were paramagnetic and semiconducting, that at 10 −1 Pa was ferromagnetic and semiconducting, and those at 10 −2 and 10 −3 Pa were ferromagnetic and metallic. The Fe–ITO films grown at the pressure below 10 −1 Pa exhibited room-temperature ferromagnetism.