Effect of adatom mobility and substrate finish on film morphology and porosity: thin chromium film on hard disk
Source abstract
Abstract
The morphology and porosity of thin chromium films are greatly influenced by the mobility of the adatoms on the growing film surface, which is controlled by substrate temperature, substrate bias during sputter deposition, and sputter pressure. Cr film of acicular morphology accompanied with higher film porosity is promoted at low substrate temperature; whereas increasing temperature will cause the growth of domed-top grain morphology with lower pinhole density. Energetic ion bombardment associated with substrate bias also leads to the formation of denser films. Another factor that has profound influence on the film porosity is the substrate finishing conditions. Films deposited on a substrate with random polishing scratches and plating pits are extremely porous and develop numerous pinholes. The pinhole density decreases when films are deposited on substrates with increasing stock removal during the subsequent texturing process. Therefore, smoother substrates also lead to reduced film porosity.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Metal and Thin Film Mechanics · High-Temperature Coating Behaviors · Diamond and Carbon-based Materials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (15)
Show source-provided references
1. Yogi · IEEE Trans. Mag. · 1990 · 26 · 157810.1109/20.104453 ↗
2. Rice · J. Electrochem. Soc. · 1979 · 126 · 145910.1149/1.2129307 ↗
3. Dubin · J. Appl. Phys. · 1982 · 53 · 257910.1063/1.330913 ↗
4. Novotny · IEEE Trans. Mag. · 1987 · 23 · 364510.1109/TMAG.1987.1065228 ↗
5. Pressesky · IEEE Trans. Mag. · 1990 · 26 · 159610.1109/20.104459 ↗
6. Lal · IEEE Trans. Mag. · 1994 · 30 · 395410.1109/20.333955 ↗
7. R.W.J. Chia et al., in: A. Kumar, Y.-W. Chung, R.W.J. Chia (Eds.), Hard Coatings Based on Borides, Carbides & Nitrides, The Minerals, Metals & Materials Society, Warrendale, PA, 1998. p. 311.
8. Wang · J. Vac. Sci. Technol. A · 1998 · 16 · 174510.1116/1.581295 ↗
9. R.W.J. Chia et al., in: L.T. Romankiw, S. Krongelb, C.H. Ahn (Eds.), Magnetic Materials, Processes, and Devices V, The Electrochemical Society, Pennington, NJ, 1999, p. 255.
10. Swab · J. Vac. Sci. Technol. A · 1980 · 17 · 36210.1116/1.570388 ↗
11. Movchan · Phys. Met. Metall. · 1969 · 28 · 83
12. Thornton · Ann. Rev. Mater. Sci. · 1977 · 7 · 23910.1146/annurev.ms.07.080177.001323 ↗
13. Thornton · J. Vac. Sci. Technol. A · 1986 · 4 · 305910.1116/1.573628 ↗
14. Messier · J. Appl. Phys. · 1985 · 58 · 373910.1063/1.335639 ↗
15. Ross · J. Appl. Phys. · 1983 · 54 · 574410.1063/1.331797 ↗