Substrate dependence of large ordinary magnetoresistance in sputtered Bi films

Abstract The Bi films of different crystalline orientations can be obtained from growing on selected substrates such as Si(1 0 0), Si(1 1 0), and Si(1 1 1), which are prepared with DC sputtering followed by post-annealing at 267°C for 8 h. Besides, the positive large ordinary magnetoresistance effect is shown to be highly anisotropic. We have also observed distinct oscillation periods of Shubnikov de-Haas oscillations at low temperatures. This is due to the different orientation of the cyclotron orbits with respect to the films.