Silicon dioxide (SiO2) solid blocking layer on through-glass via surface for efficient highly selective copper filling
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Abstract
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Research context
OpenAlex topics: 3D IC and TSV technologies · Copper Interconnects and Reliability · Electronic Packaging and Soldering Technologies
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References (40)
Show source-provided references
1. InFO (wafer level integrated fan-out) technology
2. Development of high density fan out wafer level package (HD FOWLP) with multi-layer fine pitch RDL for mobile applications
3. Li · 2011 · 341
4. Recent advances and trends in fan-out wafer/panel-level packaging10.1115/1.4043341 ↗
5. Electrochemical investigations for copper electrodeposition of through-silicon via10.1016/j.mee.2010.10.018 ↗
6. Bottom-up copper electroplating using transfer wafers for fabrication of high aspect-ratio through-silicon-vias10.1016/j.mee.2009.06.029 ↗
7. The development of a tapered silicon micro-micromachining process for 3D microsystems packaging10.1088/0960-1317/18/11/115028 ↗
8. Through-silicon-via (TSV) filling by electrodeposition with pulse-reverse current10.1016/j.mee.2016.02.020 ↗
9. Three-dimensional integrated circuit (3D IC) key technology: through-silicon via (TSV)10.1186/s11671-017-1831-4 ↗
10. Performance and reliability study of TGV interposer in 3D integration
11. Progress and application of through glass via (TGV) technology
12. Investigating on through glass via based RF passives for 3-D integration10.1109/JEDS.2018.2849393 ↗
13. Low-loss, high-linearity RF interposers enabled by through glass vias10.1109/LMWC.2018.2869285 ↗
14. Photonic system-in-package technologies using thin glass substrates
15. Through-glass vias for glass interposers and MEMS packaging applications fabricated using magnetic assembly of microscale metal wires10.1109/ACCESS.2018.2861886 ↗
16. Through-glass copper via using the glass reflow and seedless electroplating processes for wafer-level RF MEMS packaging10.1088/0960-1317/23/8/085012 ↗
17. The effects of polyvinylpyrrolidone molecular weight on defect-free filling of through-glass vias (TGVs)10.1016/j.jiec.2021.01.046 ↗
18. Through-hole filling by copper electroplating10.1149/1.2988134 ↗
19. Highly selective Cu electrodeposition for filling through silicon holes10.1149/1.3562278 ↗
20. Simulation of copper electrodeposition in through-hole vias
21. Periodic pulse reverse Cu plating for through-hole filling10.1149/2.003305eel ↗
22. Research of wafer-level vacuum packaging based on TGV technology for MEMS devices
23. Through glass VIAS using an industry compatible glass handling solution
24. Selective cu electrodepoSition on MicroMeter trencheS USing Microcontact printing and additiveS
25. Selective Copper Electrodeposition for Redistribution Layer by Varying Concentration and Agitation of Janus Green B
26. Continuous Ni-layer on multiwall carbon nanotubes by an electroless plating method10.1016/S0257-8972(02)00032-4 ↗
27. Load-displacement relations for nanoindentation of viscoelastic materials
28. An optimized NiP seed layer coating method for through glass via (TGV)10.1016/j.mee.2022.111735 ↗
29. Understanding the current-voltage behavior of high temperature solid oxide fuel cell stacks10.1149/2.1541713jes ↗
30. Simple data acquisition of the current-voltage and illumination-voltage curves of solar cells1
31. Micro-EIS of anodic thin oxide films on titanium for capacitor applications10.1016/j.electacta.2008.11.003 ↗
32. Effect of Mn/Mo incorporated oxide layer on the corrosion behavior of AA 2024 alloy10.1016/j.corsci.2011.08.016 ↗
33. Corrosion behavior of boride layers evaluated by the EIS technique10.1016/j.apsusc.2007.05.016 ↗
34. Analysis of EIS characteristics of CO2 corrosion of well tube steels with corrosion scales10.1016/j.apsusc.2005.09.011 ↗
35. Effect of pulse current and pre-annealing on thermal extrusion of Cu in through-Silicon via (TSV)10.3389/fchem.2020.00771 ↗
36. Classification of suppressor additives based on synergistic and antagonistic ensemble effects10.1016/j.electacta.2011.03.015 ↗
37. Effect of additives on copper electroplating profile for TSV filling
38. Benzyl-containing quaternary ammonium salt as a new leveler for microvia copper electroplating10.1016/j.electacta.2022.141013 ↗
39. Characterization of through-hole filling by copper electroplating using a tetrazolium salt inhibitor10.1149/2.005312jes ↗
40. UV-assisted screen-printing of flat textiles10.1111/j.1478-4408.2012.00373.x ↗