Characterization and Dielectric Properties of Vacuum Deposited Zinc Phthalocyanine Thin Film

The present paper reports the structural, optical and electrical properties of zinc phthalocyanine (ZnPc) thin films which were grown by the thermal evaporation technique at different substrate temperatures of 312, 363 and 413 K and dielectric response of sandwich geometry of ZnPc thin films have also been studied within frequency range 1 Hz–50 KHz. The crystal structures of these ZnPc films have been characterized using the X-ray diffraction technique. Raman spectra and photoluminescence have been recorded to study the molecular orientations in the ZnPc films for different substrate temperatures. The absorption spectra of the ZnPc films have shown two absorption bands – namely, the Soret band and Q-band. The activation energy values of these films have been determined to be lying in the range of 0·70–0·75 eV. Hole mobility values of ZnPc films have been calculated by using differential susceptance method. The capacitance and dielectric constant have been found to decrease with increase in frequency.