High electrical conductivity of Cu wires cladded by Gr/Cu coating
Source abstract
Abstract
Graphene/copper (Gr/Cu) coating-cladded copper (Cu) wires with high electrical conductivity and low surface roughness were successfully prepared from copper (II) sulfate pentahydrate (CuSO4·5H2O) containing graphene (Gr) ranging from 0 to 2.0 g/l by direct current electrodeposition. The Gr defect density, surface morphology, surface roughness and electrical conductivity of Gr/Cu coating-cladded copper wires were investigated. The results revealed that with increasing Gr concentration, the surface roughness and electrical conductivity of Gr/Cu coating-cladded copper wires were enhanced simultaneously. When the Gr concentration was 1.2 g/l, Gr/Cu coating-cladded copper wires possessed the lowest surface roughness of 4.241 μm and the highest electrical conductivity of 105.5% International Annealed Copper Standard. Compared with the counterpart without Gr, the surface roughness was reduced by 10.7%, and the electrical conductivity was increased by 5.4%. Models were developed to evaluate the surface roughness and electrical conductivity of Gr/Cu coating-cladded copper wires.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Electronic Packaging and Soldering Technologies · Electrodeposition and Electroless Coatings · Copper Interconnects and Reliability
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Materials Science and Engineering, Changzhou University, Changzhou, People’s Republic of China; Jiangsu Key Laboratory of Materials Surface Science and Technology, Key Laboratory of Surface Engineering and Advanced Materials for Petroleum and Chemical Industry, National Experimental Demonstration Center for Materials Science and Engineering, Changzhou University, Changzhou, People’s Republic of China
Department of Physics, Ufa State Aviation Technical University, Ufa, Russia; Sino-Russian Joint Laboratory of Functional Nanostructured Materials, Changzhou University, Changzhou, People’s Republic of China
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