Thin film silicon substrate formation using electrochemical anodic etching method
Source abstract
Abstract
The production of detached porous silicon (PS) layers for layer transfer (LT) has been investigated. Electrochemical anodisation (ECA) studies of monocrystalline silicon (mono-Si) wafers in a hydrofluoric acid/ethanol/deionised (DI) water solution showed that porosity can be controlled by controlling current density during ECA. Double layered PS layers consisting of low (26·5%) and high (86·3%) porosity layers were formed by ECA at 1·5 mA cm–2 and 100 mA cm–2 for etching times of 10 min and 10 sec respectively. These PS layers are considered viable for LT substrate technology.
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Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Display and Nanosystem LaborotoryCollege of Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-701, Korea
Strategic Energy Research InstituteSejong University, 98 Kunja-Dong, Kwangin-Gu Seoul 143-747, Korea
School of Electrical EngineeringCollege of Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-701, Korea;, Email: bkju@korea.ac.kr
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