article·2009-09-30Open access

First-principles Study on Magnetism of Cu in GaN

Byung‐Sub Kang, Chul-Min Heo, Kwang-Kwyun Lyu, Seong-Cho Yu

Abstract

The electronic properties of Cu or Pd-doped GaN at several concentrations are examined using the full-potential linear muffin-tin orbital method. For ($Cu0.055Ga0.945$)N, the model reveals a magnetic moment of $1.47{\mu}B$ per supercell. The range of concentrations that are spin-polarized should be restricted within narrow limits. A paramagnetic to ferromagnetic phase transition is found to occur at a Cu concentration of 5.55%.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Advanced Chemical Physics Studies

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