journal article·2014-08

Effects of hyperthermia induced crystalline aggregation on properties of TiO2 thin films

G. Z. Dong, H. Q. Fan, Y. N. Zhu, X. B. Pan, X. B. Jiang

Surface Engineering· Volume 30· Issue 8
Publisher page

Abstract

TiO2 thin films were prepared on fused quartz by using the sol–gel dip coating method followed by annealing. The effects of annealing temperature on the phase transition, crystalline agglomeration, surface topography and optical properties of the TiO2 films were studied. Activation energy of the phase transition from the anatase to rutile phase was estimated about 64 kJ mol−1. Crystallite size did not vary significantly with the annealing temperature, but higher temperature led to the aggregation of nanocrystallines into large particles with wide size distribution due to the surface nucleation (SN) mode gradually replaced the interface nucleation (IN) mode. Both the optical transmittance and band gap of the TiO2 thin films decrease as the annealing temperature increase. The highest optical transmittance over the visible wavelength region was obtained by the film annealed at 800 K, which was composed entirely of anatase phase.
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Research context

OpenAlex topics: TiO2 Photocatalysis and Solar Cells · Advanced Photocatalysis Techniques · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Solidification Processing School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China

Northwest Institute of Nuclear Technology, Xi'an 710024, China

References (24)

Show source-provided references
1. 10.1038/238037a010.1038/238037a0 ↗
2. 10.1002/adma.20110379910.1002/adma.201103799 ↗
3. 10.1179/1743294411Y.000000003110.1179/1743294411Y.0000000031 ↗
4. 10.1016/j.apsusc.2007.10.00610.1016/j.apsusc.2007.10.006 ↗
5. 10.1179/1743294413Y.000000019710.1179/1743294413Y.0000000197 ↗
6. 10.1179/1743294412Y.000000007610.1179/1743294412Y.0000000076 ↗
7. 10.1179/1743294412Y.000000002710.1179/1743294412Y.0000000027 ↗
8. 10.1016/0040-6090(91)90158-T10.1016/0040-6090(91)90158-T ↗
9. 10.1063/1.243241010.1063/1.2432410 ↗
10. 10.1016/S0022-3093(98)00489-X10.1016/S0022-3093(98)00489-X ↗
11. 10.1002/jrs.289910.1002/jrs.2899 ↗
12. 10.1021/jp000499j10.1021/jp000499j ↗
13. 10.1016/j.apsusc.2012.01.10810.1016/j.apsusc.2012.01.108 ↗
14. 10.1016/j.solidstatesciences.2009.07.02110.1016/j.solidstatesciences.2009.07.021 ↗
15. 10.1111/j.1151-2916.1998.tb02536.x10.1111/j.1151-2916.1998.tb02536.x ↗
16. 10.1021/am301690f10.1021/am301690f ↗
17. 10.1063/1.476736110.1063/1.4767361 ↗
18. 10.1557/JMR.1990.124610.1557/JMR.1990.1246 ↗
19. 10.1557/JMR.2000.006710.1557/JMR.2000.0067 ↗
20. 10.1016/j.apsusc.2011.10.09010.1016/j.apsusc.2011.10.090 ↗
21. 10.1016/S0022-3697(98)00264-910.1016/S0022-3697(98)00264-9 ↗
22. 10.1179/1743294412Y.000000001610.1179/1743294412Y.0000000016 ↗
23. 10.1016/j.apsusc.2012.10.15610.1016/j.apsusc.2012.10.156 ↗
24. 10.1016/S0926-3373(01)00277-610.1016/S0926-3373(01)00277-6 ↗