Improvement of Junction Properties of ZnO Nanorod/GaN Heterojunction Using Selective Laser Processing

We fabricated the ZnO nanorod/GaN heterojunction light emitting diode by directly-growth of the ZnO nanorods on the GaN film using the nanoparticle-assisted pulsed laser deposition. Subsequently, selective laser irradiation to the p-n junction was applied to improve the junction properties. The UV emission was strongly enhanced by the laser irradiation. The peak wavelength of the UV emission is 377 nm, which is attributed to the near-band-emission of ZnO. In addition, the forward current was increased in the I-V characteristics by a factor of 6 at a bias voltage of 30 V.