Effects of ammonia in the synthesis of copper (II) oxide nanostructures grown via microwave chemical bath deposition
Source abstract
Abstract
Abstract In this study, CuO was grown on fluorine-doped tin oxide (FTO) substrates by depositing a copper (II) oxide seed layer via microwave chemical bath deposition while controlling the ammonia concentration. The morphological, optical, structural, electrical, and photoelectrochemical properties were measured by field emission scanning electron microscopy (FE-SEM), UV–vis spectroscopy (UV–vis), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), electrochemical impedance spectroscopy (EIS), and three-electrode potentiostat measurements, respectively. The ammonia concentration affected the morphological and structural properties (i.e., the growth and thickness of the CuO nanostructures), the optical properties (i.e., optical energy bandgap), the electrical properties (i.e., the flat-band potential and acceptor density) and the photoelectrochemical properties of the prepared CuO samples. As a result, the highest photocurrent density of 2.05 mA/cm2 (at − 0.55 V vs. SCE) was obtained for the sample with an ammonia concentration of 0.16 M.
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Research context
OpenAlex topics: Copper-based nanomaterials and applications · ZnO doping and properties · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (52)
Show source-provided references
1. Bak · Int. J. Hydrog. Energy · 2002 · 27 · 99110.1016/S0360-3199(02)00022-8 ↗
2. Nowotny · Int. J. Hydrog. Energy · 2005 · 30 · 52110.1016/j.ijhydene.2004.06.012 ↗
3. Gratzel · Nature · 2001 · 414 · 33810.1038/35104607 ↗
4. Wrighton · Acc. Chem. Res. · 1979 · 12 · 910.1021/ar50141a001 ↗
5. Keis · Sol. Energy Mater. Sol. Cells · 2002 · 73 · 5110.1016/S0927-0248(01)00110-6 ↗
6. Ochiai · J. Photochem. Photobiol. C · 2012 · 13 · 24710.1016/j.jphotochemrev.2012.07.001 ↗
7. Rahman · Int. J. Hydrog. Energy · 2012 · 37 · 1398910.1016/j.ijhydene.2012.07.037 ↗
8. Tatsuma · Chem. Mater. · 2001 · 13 · 283810.1021/cm010024k ↗
9. Wu · J. Phys. Chem. C · 2010 · 114 · 1155110.1021/jp103437y ↗
10. Koffyberg · J. Appl. Phys. · 1982 · 53 · 117310.1063/1.330567 ↗
11. Peng · J. Appl. Phys. · 2012 · 111
12. Balamurugan · Thin Solid Films · 2001 · 396 · 9010.1016/S0040-6090(01)01216-0 ↗
13. Choi · Sensors Actuators B Chem. · 2000 · 69 · 12010.1016/S0925-4005(00)00519-0 ↗
14. Yip · Phys. Rev. Lett. · 1992 · 69 · 226410.1103/PhysRevLett.69.2264 ↗
15. Musa · Sol. Energy Mater. Sol. Cells · 1998 · 51 · 30510.1016/S0927-0248(97)00233-X ↗
16. Dar · Appl. Surf. Sci. · 2009 · 255 · 627910.1016/j.apsusc.2009.02.002 ↗
17. Kaur · J. Cryst. Growth · 2006 · 289 · 67010.1016/j.jcrysgro.2005.11.111 ↗
18. Terasako · Sol. Energy Mater. Sol. Cells · 2015 · 132 · 7410.1016/j.solmat.2014.08.023 ↗
19. Chen · J. Alloys Compd. · 2008 · 464 · 53210.1016/j.jallcom.2007.10.058 ↗
20. Yang · Talanta · 2010 · 82 · 2510.1016/j.talanta.2010.03.047 ↗
21. Yu · Chem. Mater. · 2007 · 19 · 432710.1021/cm070386d ↗
22. Dar · Appl. Surf. Sci. · 2008 · 254 · 747710.1016/j.apsusc.2008.06.004 ↗
23. Wang · J. Cryst. Growth · 2002 · 244 · 8810.1016/S0022-0248(02)01571-3 ↗
24. Sultana · Appl. Surf. Sci. · 2017 · 418 · 38010.1016/j.apsusc.2016.12.139 ↗
25. Oh · J. Alloys Compd. · 2015 · 620 · 5510.1016/j.jallcom.2014.09.108 ↗
26. Ramya · J. Mater. Sci. - Mater. Electron. · 2015 · 26 · 848910.1007/s10854-015-3520-3 ↗
27. Xiangm · J. Power Sources · 2010 · 195 · 31310.1016/j.jpowsour.2009.07.022 ↗
28. Oh · J. Electrochem. Soc. · 2014 · 161 · H57810.1149/2.1121409jes ↗
29. Hsu · J. Electroanal. Chem. · 2013 · 704 · 1910.1016/j.jelechem.2013.06.008 ↗
30. Zhang · Adv. Mater. · 2003 · 15 · 82210.1002/adma.200304840 ↗
31. Baturay · J. Sol-Gel Sci. Technol. · 2016 · 78 · 42210.1007/s10971-015-3953-4 ↗
32. Lee · Korean J. Metall. Mater. Sci. · 2015 · 53 · 43810.3365/KJMM.2015.53.6.438 ↗
33. Li · Chem. Mater. · 2008 · 20 · 56710.1021/cm070784g ↗
34. Liu · Am. Chem. Soc. · 2004 · 126 · 812410.1021/ja048195o ↗
35. Hsu · RSC Adv. · 2012 · 2 · 1245510.1039/c2ra21979d ↗
36. Chen · Vacuum · 2009 · 83 · 92710.1016/j.vacuum.2008.10.003 ↗
37. Morales · Thin Solid Films · 2005 · 474 · 13310.1016/j.tsf.2004.08.071 ↗
38. Espinos · J. Phys. Chem. B · 2002 · 106 · 692110.1021/jp014618m ↗
39. Lim · Phys. Chem. Chem. Phys. · 2014 · 16 · 2592810.1039/C4CP03241A ↗
40. Chiang · J. Electrochem. Soc. · 2012 · 159 · B22710.1149/2.081202jes ↗
41. Lee · Chem. Eng. · 2015 · 3 · 297
42. Kushwaha · Electrochim. Acta · 2014 · 130 · 22210.1016/j.electacta.2014.03.008 ↗
43. Tietze · Phys. Rev. B · 2012 · 86 · 03532010.1103/PhysRevB.86.035320 ↗
44. Hou · Appl. Phys. Lett. · 2009 · 95
45. Kumari · Curr. Sci. · 2006 · 91 · 8
46. Todorov · Nat. Commun. · 2017 · 8 · 68210.1038/s41467-017-00582-9 ↗
47. Kang · J. Mater. Chem. A · 2013 · 1 · 576610.1039/c3ta10689f ↗
48. Li · ACS Appl. Mater. Interfaces · 2014 · 6 · 48010.1021/am404527q ↗
49. Masudy-Panah · Appl. Mater. Interfaces · 2015 · 8 · 120610.1021/acsami.5b09613 ↗
50. Emin · J. Electroanal. Chem. · 2014 · 717–718 · 24310.1016/j.jelechem.2014.01.038 ↗
51. Takahashi · Thin Solid Films · 2001 · 388 · 23110.1016/S0040-6090(01)00811-2 ↗
52. You · Jpn. J. Appl. Phys. · 2012 · 5110.1143/JJAP.51.02BK04 ↗